Optimization of CMP from the Viewpoint of Consumable Effects

Overview of Methods for Characterization of Pattern Dependencies in Copper Cmp

Copper CMP suffers from well-known but poorly understood dishing, erosion, and other pattern dependent problems. We advocate the systematic study and characterization of these pattern dependencies through the use of electrical and physical test structures and measurements. Three length scales must be recognized: a several mm “planarization length” related to as-deposited copper pattern density,...

Modeling of chemical mechanical polishing for shallow trench isolation

Chemical mechanical polishing (CMP) is a key process enabling shallow trench isolation (STI), which is used in current integrated circuit manufacturing processes to achieve device isolation. Excessive dishing and erosion in STI CMP processes, however, create device yield concerns. This thesis proposes characterization and modeling techniques to address a variety of concerns in STI CMP. Three ma...

Some Applications of Semidefinite Optimization from an Operations Research Viewpoint

A Closed-form Analytic Model for Ild Thickness Variation in Cmp Processes

CMP planarization of oxide results in excellent long-range uniformity compared to other planarization techniques but remains hampered by systematic pattern sensiti vities. In the recent literature, se veral semi-empirical or physically-based models have been proposed to explain ILD thickness pattern sensitivities in CMP, but all of these models either fail to predict key empirical results, are ...

Copper CMP and Process Control

A production worthy, copper CMP technology has been successfully developed on a multi-platen CMP system. The System consists of three polish platens, each of which is equipped with an optical endpoint detection system. The process consists of three steps with different polish slurries, and is designed to polish copper with a tantalum based barrier, and to achieve good defect performance. Patter...